The full-digitally controlled Gate Drive Unit (GDU) for High Power Insulated Gate Bipolar Transistors (IGBT) provides all necessary features, such as active control, active clamping during switching off and active balancing of the collector voltage for IGBTs connected in series. The adaptation of this GDU for a dedicated IGBT Module or a special application is very simple and efficient by just setting parameters in the digital control. This is considered to be one of the major benefits, as hardware adjustments are no longer necessary and the whole system is far more flexible. These software parameters can even be adapted during operation. Therefore, it is possible to introduce an automatic adaptation procedure for a special IGBT module or application. The EMC level of the inverter can also be dynamically reduced depending on the operating point, and it is possible to increase the maximum output power of such an inverter because it is no longer necessary to statically adjust the gate signal to address worst case scenarios.
- Wide input voltage range
- Low power consumption
- Variable gate array
- Multiple soft turn-off
- Multiple overcurrent protection
- Multiple overvoltage protection
- Active clamp protection
- High isolation voltage
- LED error indication
- Feedback function
Typical Values
Vce | 3300V |
Isolation Voltage | 10000V |
Power Supply | 15V (13V-30V) |
Static Power Consumption | 1.68W |
1kHz Switching Power Consumption | 2.58W |
Gate drive voltage | 15V |
Max switching frequency | 100kHz |
Peak current | +/- 70A |
di/dt protection | 3.7us |
Overcurrent protection | 3000A @125°C |
Soft turn-off time | 6us |
Switch-on delay | 400ns |
Turn-off delay | 400ns |
Input/Output/Feedback light fibre | 660nm |
Working Temperature | -40°C to +85°C |
Input | Avago HFBR-2521Z |
Output | Avago HFBR-1521Z |
Power connection | Phoenix FKC 2,5/2-STF-5,08 |